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| BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS Designed for Complementary Use with the BD545 Series 85 W at 25C Case Temperature 15 A Continuous Collector Current Customer-Specified Selections Available C B SOT-93 PACKAGE (TOP VIEW) 1 2 E 3 Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25C case temperature (unless otherwise noted) RATING BD546 Collector-base voltage (IE = 0) BD546A BD546B BD546C BD546 Collector-emitter voltage (IB = 0) (see Note 1) BD546A BD546B BD546C Emitter-base voltage Continuous collector current Continuous device dissipation at (or below) 25C case temperature (see Note 2) Continuous device dissipation at (or below) 25C free air temperature (see Note 3) Operating free air temperature range Operating junction temperature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. These values apply when the base-emitter diode is open circuited. 2. Derate linearly to 150C case temperature at the rate of 0.68 W/C. 3. Derate linearly to 150C free air temperature at the rate of 28 mW/C. VEBO IC Ptot Ptot TA Tj Tstg TL VCEO V CBO SYMBOL VALUE -40 -60 -80 -100 -40 -60 -80 -100 -5 -15 85 3.5 -65 to +150 -65 to +150 -65 to +150 260 V A W W C C C C V V UNIT JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 1 BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS electrical characteristics at 25C case temperature PARAMETER Collector-emitter breakdown voltage TEST CONDITIONS BD546 V(BR)CEO IC = -30 mA (see Note 4) VCE = -40 V ICES Collector-emitter cut-off current Collector cut-off current Emitter cut-off current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter voltage Small signal forward current transfer ratio Small signal forward current transfer ratio VCE = -60 V VCE = -80 V VCE = -100 V ICEO IEBO VCE = -30 V VCE = -60 V VEB = VCE = VCE = VCE = IB = VCE = -5 V -4 V -4 V -4 V -2 A -4 V VBE = 0 VBE = 0 VBE = 0 VBE = 0 IB = 0 IB = 0 IC = 0 IC = IC = IC = -1 A -5 A -5 A (see Notes 4 and 5) 60 25 10 (see Notes 4 and 5) (see Notes 4 and 5) f = 1 kHz f = 1 MHz 20 3 -0.8 -1 -1.8 V V IB = 0 BD546A BD546B BD546C BD546 BD546A BD546B BD546C BD546/546A BD546B/546C MIN -40 -60 -80 -100 -0.4 -0.4 -0.4 -0.4 -0.7 -0.7 -1 mA mA mA V TYP MAX UNIT hFE IC = -10 A IC = -10 A IC = -10 A IC = -0.5 A IC = -0.5 A V CE(sat) VBE hfe IB = -625 mA VCE = -10 V VCE = -10 V |hfe | NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 s, duty cycle 2%. 5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.47 35.7 UNIT C/W C/W resistive-load-switching characteristics at 25C case temperature PARAMETER ton toff TEST CONDITIONS IC = -6 A VBE(off) = 4 V IB(on) = -0.6 A RL = 5 MIN IB(off) = 0.6 A tp = 20 s, dc 2% TYP 0.4 0.7 MAX UNIT s s Turn-on time Turn-off time Voltage and current values shown are nominal; exact values vary slightly with transistor parameters. 2 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS TYPICAL CHARACTERISTICS TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT 1000 VCE = -4 V TC = 25C tp = 300 s, duty cycle < 2% TCS634AJ COLLECTOR-EMITTER SATURATION VOLTAGE vs BASE CURRENT VCE(sat) - Collector-Emitter Saturation Voltage - V -10 TCS634AB IC = IC = IC = IC = -1*0 -1 A -3 A -6 A -10 A hFE - DC Current Gain 100 10 -0*1 1 -0*1 -1*0 IC - Collector Current - A -10 -0*01 -0*01 -0*1 -1*0 -10 IB - Base Current - A Figure 1. Figure 2. BASE-EMITTER VOLTAGE vs COLLECTOR CURRENT -1*6 VCE = -4 V TC = 25 C VBE - Base-Emitter Voltage - V -1*4 TCS634AC -1*2 -1*0 -0*8 -0*6 -0*1 -1*0 IC - Collector Current - A -10 Figure 3. JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 3 BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS MAXIMUM SAFE OPERATING REGIONS MAXIMUM FORWARD-BIAS SAFE OPERATING AREA -100 SAS634AE IC - Collector Current - A -10 -1*0 -0*1 BD546 BD546A BD546B BD546C -10 -100 -1000 -0*01 -1*0 VCE - Collector-Emitter Voltage - V Figure 4. THERMAL INFORMATION MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE 100 Ptot - Maximum Power Dissipation - W TIS633AC 80 60 40 20 0 0 25 50 75 100 125 150 TC - Case Temperature - C Figure 5. 4 JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP BD546, BD546A, BD546B, BD546C PNP SILICON POWER TRANSISTORS MECHANICAL DATA SOT-93 3-pin plastic flange-mount package This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly. SOT-93 4,90 4,70 o 4,1 4,0 15,2 14,7 1,37 1,17 3,95 4,15 16,2 MAX. 12,2 MAX. 31,0 TYP. 18,0 TYP. 1 1,30 1,10 2 3 0,78 0,50 11,1 10,8 2,50 TYP. ALL LINEAR DIMENSIONS IN MILLIMETERS NOTE A: The centre pin is in electrical contact with the mounting tab. MDXXAW JUNE 1973 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. NOITAMROFNI TCUDORP 5 |
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